Product overview

In the semiconductor production line, the Coating and Developing System is an indispensable key equipment, which is essential from the initial chip prototype to the formation of circuit patterns. After receiving the substrate, the Coating and Developing System first activates the high-speed rotation system. The photoresist spreads evenly with the precisely speed-controlled turntable, and even the millimeter-level edges can be coated smoothly-this step is the most test of precision, and a slight deviation will affect the subsequent chip performance.

The coated photoresist still needs to be cured. The Coating and Developing System's built-in heating plate will gradually heat up to make the adhesive layer firmly adhere to the substrate. After the lithography machine completes the exposure, it immediately takes over the developing process. By controlling the temperature and spraying intensity of the developer, it removes the unexposed excess adhesive layer, and the basic pattern of the integrated circuit is thus revealed.

In practical use, the Coating and Developing System's line width precision is particularly reliable, and it is suitable for various chip manufacturing processes. Moreover, the production capacity, which is most valued in the production line, is also excellent. It can process a large number of substrates per hour, while having low memory usage. It can work continuously for more than ten hours stably, and can fully keep up with the mass production rhythm.

Please contact our sales representatives to obtain the most suitable solution for you.

Advantages

High-precision chip manufacturing relies on precision spin coating technique, which guarantees consistent photoresist application and significantly lessens subsequent processing difficulties.

Complex problems like timing alignment and wafer transfer between devices are easily handled by special collaborative control methods.

Significant advancements in temperature control accuracy, homogeneity at the nanoscale level, and defect control have resulted in yield rates that above 90%.

The specialized spin coating solution is appropriate for all substrate types and may be applied to wafers with different thicknesses and unusual shapes.

Uniformity and efficiency are balanced by optimized spin speed and coating pressure, which greatly lowers yield losses and makes it easier to manufacture chips with irregular shapes.

Parameters

①DS 100

product-402-460

DS 100 Device Overview
Device size (mm)	*282510801600* 2C2D+Interface	Wafer size	2-6 inch wafers (50mm-100mm)
WPH	≤160pcs	MTTR	≤4hrs
Merit Rating	Class1@0.1μm Wafer transfer area only	MTBF	≥1000hrs
Applicable process	I line, PI, PR	MTBM	>six months
Wafer contact material	PEEK/PTFE/CERAMICS	Wafer breakage rate	≤0.01%
Cassettes	SMIF; OPEN CASSETTE	UP TIME	≥95%
Application area	Compound semiconductor, integrated circuit, power device, scientific research project, optical device, IC, IGBT, MOSFET, MEMS, warping wafer, square wafer	Software runtime environment	Windows 10 or later operating system
Minimum line width	350nm	Cold and hot plate module	(HP; CPL; ADH; HHP)≤14PCS

②DS 200

product-1204-1106

DS 200 Device Overview
Device size (mm)	*166015102000* (Tower Design)	Wafer size	2-6 inch wafers (50mm-100mm)
WPH	≤150pcs	MTTR	≤4hrs
Merit Rating	Class1@0.1μm Wafer transfer area only	MTBF	≥1000hrs
Applicable process	I line, PI, PR	MTBM	>six months
Wafer contact material	PEEK/PTFE/CERAMICS	Wafer breakage rate	≤0.01%
Cassettes	SMIF; OPEN CASSETTE	UP TIME	≥95%
Application area	Compound semiconductor, LED, optical device, IC, IGBT, MOSFET, MEMS, warping wafer, square wafer	Software runtime environment	Windows 10 or later operating system
Minimum line width	350nm	Cold and hot plate module	(HP; CPL; ADH; HHP)≤14PCS

③DS 300

product-369-492

DS300 Device Overview
Device size (mm)	*285013602200* 2C2D+Interface	Wafer size	4-8 inch wafers (100mm- 200mm)
WPH	≤160pcs	MTTR	≤4hrs
Merit Rating	Class1@0.1μm Wafer transfer area only	MTBF	≥1000hrs
Applicable process	I line, PI, PR	MTBM	>six months
Wafer contact material	ASML, Nikon, CANON, CECT, SMCC	Wafer breakage rate	≤0.01%
Cassettes	SMIF; OPEN CASSETTE	UP TIME	≥95%
Application area	Compound semiconductor, integrated circuit, power device, memory chip, scientific research project, optical device, IC, IGBT, MOSFET, MEMS, warping wafer, square wafer	Software runtime environment	Windows 10 or later operating system
Minimum line width	180nm	Cold and hot plate module	(HP; CPL; AD; DHP)≤24PCS

④DS 400

product-589-441

DS 400 Device Overview
Device size (mm)	*397516552550* 4C4D+Interface	Wafer size	6-8 inch wafers(150mm- 200mm)
WPH	≤180pcs	MTTR	≤4hrs
Merit Rating	Class1@0.1μm Wafer transfer area only	MTBF	≥1000hrs
Applicable process	I line, KrF, ArF, PI, PR, Package	MTBM	>six months
Wafer contact material	ASML, Nikon, CANON, CECT, SMCC	Wafer breakage rate	≤0.01%
Cassettes	FOUP; SMIF; OPEN CASSETTE	UP TIME	≥95%
Application area	Compound semiconductor, integrated circuit, power device, memory chip, scientific research project, IC, IGBT, MOSFET, MEMS, warping wafer, square wafer	Software runtime environment	Windows 10 or later operating system
Minimum line width	90nm	Cold and hot plate module	(LHP; CPL; ADH; HCH; PHP ; HCP)≤38PCS

⑤DS 500

product-501-501

DS 500 Device Overview
Device size (mm)	*537021002650* 4C4D+Interface	Wafer size	8- 12 inch wafers(200mm- 300mm)
WPH	≤200pcs	MTTR	≤4hrs
Merit Rating	Class1@0.1μm Wafer transfer area only	MTBF	≥1000hrs
Applicable process	I line, KrF, ArF, PI, PR, Package	MTBM	>six months
Wafer contact material	ASML, Nikon, CANON, CECT, SMCC	Wafer breakage rate	≤0.01%
Cassettes	FOUP; SMIF	UP TIME	≥95%
Application area	Compound semiconductor, integrated circuit, power device, memory chip, scientific research project, IC, IGBT, MOSFET, MEMS, warping wafer, square wafer, CoWoS	Software runtime environment	Windows 10 or later operating system
Minimum line width	45nm	Cold and hot plate module	(LHP; CPL; ADH; HCH; PHP ; HCP)≤42PCS