China Etching Machine Manufacturers Suppliers - Customized Etching Machine Pricelist

Your Professional Etching Machine Supplier

Nice-tech is a professional semiconductor equipment provider with a dedicated factory and an experienced technical team. Our operations are supported by multiple production lines equipped with standardized process control and key semiconductor-related equipment to ensure stable quality and delivery. The company is backed by a skilled team of engineers, technicians, and project specialists with solid industry experience, enabling effective coordination between equipment suppliers and end users.

IBE System
Our Ion Beam Etching (IBE) System is a high-precision material processing equipment designed for the micro-nano fabrication industry. It utilizes a focused and controllable ion beam to perform physical etching on the surface of...
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Reverse Beam Shaping System
Nice-Tech offers 8-inch and 12-inch RIBS systems, which combine physical sputtering (from traditional IBS) with reactive gases for precise material patterning.
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Ion Beam Shaping System
Leuven Instruments offers 8-inch (IBS-8) and 12-inch (IBS-12) IBS systems, both based on physical sputtering: positive ions from the ion source are accelerated, neutralized, and bombarded the sample surface to form patterns.
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Hard Mask Etching System
MHS 100, developed by Leuven Instruments, is a dedicated metal hardmask etching system for 12-inch IC industry. It consists of ICP etch chambers and a transfer module, focusing on TiN metal hardmask opening in back-end copper...
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Hard Metal-layer Etching System
Developed by Nice-Tech, the MSE 100 is a 12-inch integrated system tailored specifically for special metal stack etching—its core purpose is to support the manufacturing scenarios of emerging memory devices.
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Metal Etching System
Nice-Tech offers two mass-production metal etching systems for different wafer sizes, both based on ICP technology and tailored for IC back-end (BEOL) metal processing.
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Silicon Etching System
Nice-Tech offers two dedicated silicon etching systems for different wafer sizes, both based on ICP technology and tailored for IC mass production.
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ICP Deep Si Etcher
This 8-inch ICP-DSE system is a mass-production etcher for high-aspect-ratio silicon processing. It integrates dual-frequency ICP power (2MHz+13.56MHz), our patented rapid gas switching module, and in-situ laser endpoint detection—with...
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8" ICP Etcher
This 8-inch ICP etching system is a mass-production-grade device for medium/small IC fabs and specialized processes. Featuring a high-stability ICP source, precision vacuum transfer, and closed-loop control, it enables ultra-precise...
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6" CCP Etcher
The 6-inch CCP etching tool for small-to-medium production and R&D. Using CCP tech, its single chamber generates plasma to etch materials; volatile byproducts are removed via vacuum. It works with ≤6-inch wafers, offers flexible,...
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Cu And Ti Etcher
The SE Series Cu-Ti Etching Integrated Equipment is all about specialized wet etching for semiconductor advanced packaging—designed to handle 8–12-inch wafers seamlessly. It’s a fully customizable metal etching solution, so you can...
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RIE Etcher
Reactive Ion Etching (RIE) machines are high-performance dry etching tools built around radio frequency discharge technology. Their core trick? Pairing physical bombardment with chemical reactions to precisely strip away target...
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why choose us

Tailored Solution Delivery

Our experienced team analyzes clients' specific needs to match the most suitable semiconductor equipment and offer customized solutions for different production and R&D scenarios.

Comprehensive Technical Support

We provide full-cycle technical assistance, from equipment commissioning to maintenance, including on-site troubleshooting and real-time online consultation, reducing operational hassles.

Support for Advanced Processes

We continuously invest in industry insights and adapt to cutting-edge tech trends, offering high-precision equipment solutions and upgrading services to meet high-end chip production needs.

Service Advantages

Offer 1v1 online support for equipment operation, parameter adjustment, and process optimization, responding to your questions promptly.

RIE Etcher

The Reactive Ion Etcher is a semi-automatic system designed specifically to etch dielectric, passivation, and semiconductor materials anisotropically. Etchable materials include: Silicon dioxide (BSG, PSG, and BPSG), silicon nitride, silicon oxy-nitride, silicon, poly-Si, refractory metals, metal silicides, polyimide, photoresist, and other polymeric films. The Reactive Ion Etcher is one of the many tools analytical Lab uses to prepare your samples, precisely etch many materials and find the failure every time.

Item	Specific Indicators
Applicable Wafer Size	8 inch and below
Etching Rate	0.1-4μm/min(specific value depends on the type of material to be etched and actual process parameters)
Etching Uniformity	±5%(based on 6-inch wafer, calculation method: (Maximum Value- Minimum Value)/(2xAverage Value))
Substrate Stage Cooling Method	Water Cooling
Control Method	Full digital automatic control
Pressure Control	Automatic constant pressure adjustment(ensures process stability)
Optional Configuration	LOAD LOCK loading chamber(can reduce atmospheric pollution, improve loading efficiency and chamber vacuum retention capacity)

Features of RIE Etcher

Highly Selective Etching:

Achieves highly selective etching of different materials by selecting appropriate gas components and process parameters.

Fully Automatic Control:

Equipped with an advanced control system and computer operating system for automated process operation.

Compact Design:

The equipment features a compact structure and small footprint, suitable for research institutions, university laboratories, and small-batch production scenarios.

High Process Uniformity:

Ensures uniform etching across the material surface, improving product yield.

Supports Multiple Wafer Sizes:

Different models support wafer processing from 6 inches to 200mm (8 inches or smaller full wafers and wafer fragments).

Applications of RIE Etcher

Semiconductor Manufacturing

Used in chip fabrication for creating circuits and transistors; essential for etching silicon wafers and thin-film materials.

MEMS and Nanotechnology

Used to manufacture microelectromechanical systems (MEMS) such as sensors, accelerometers, and microfluidic devices.

Optics and Photonics

Etches precise micro-optical components, waveguides, and photonic crystals.

Biomedical Devices

Creates microscale patterns for lab-on-a-chip devices and bio-sensing applications.

Type of RIE Etcher

Standard Reactive Ion Etching (RIE)

Uses low-pressure plasma and reactive gases for controlled etching.Provides high precision, suitable for semiconductors and microfabrication.cleaning and activating a surface

Deep Reactive Ion Etching (DRIE)

A specialized RIE technique is used for deep, high-aspect-ratio etching.Often utilized in MEMS fabrication for creating high-resolution microstructures.

Inductively Coupled Plasma (ICP) Etching

Uses inductively coupled plasma (ICP) to generate high-density plasma.Achieves faster etching rates and better uniformity than standard RIE.Ideal for etching through thick materials in advanced semiconductor processing.

Features of RIE Etcher

Wide range of etchable materials:

Capable of etching various materials including dielectrics, metals, and silicon, such as silicon-based materials (e.g., Si, SiNx, SiO2, Ge, GeSi), organic materials, III-V compounds, sapphire, SiC, and metals (e.g., Au, Ag, W).

Surface modification:

Enables functions such as photoresist ashing, surface hydrophilicity/hydrophobicity modification, surface energy enhancement, functional group introduction, and improved biocompatibility.

Components of RIE Etcher

Vacuum System: Typically a cylindrical vacuum chamber, ensuring a low-pressure environment for the operation, which facilitates the generation and maintenance of plasma. For example, some equipment can achieve an ultimate vacuum of 0.0035 Pa or lower.

Gas Supply System: Delivers specific etching gases to the vacuum chamber. The type and flow rate of the gas affect the etching characteristics. The equipment is generally equipped with a multi-channel gas flow control system, supporting various gas inputs such as oxygen, argon, and nitrogen. Some equipment can also accommodate corrosive gases according to user requirements.

Control System: Precisely controls process parameters such as gas flow rate, energy input, etching time, vacuum chamber pressure, RF power, and temperature, ensuring the accuracy and repeatability of the etching process.

Computer Operating System: Modern RIE equipment is usually equipped with a computer operating system to achieve complex process control and data management. It includes functions such as system monitoring, process editing, parameter display, storage of process logs, and operation records.

Working Principle of RIE Etcher

Plasma Generation:

A low-pressure gas, such as oxygen (O₂), fluorine (CF₄), or chlorine (Cl₂), is introduced into the chamber.

Ion Acceleration:

An RF electric field ionizes the gas, creating a plasma with reactive ions and free radicals.

Material Etching:

The accelerated ions chemically react with the substrate’s surface, removing targeted material while maintaining precision.

Gases and Materials of RIE Etcher

01/

Chlorine (Cl2): Chlorine is frequently used for etching silicon, metals, and compound semiconductors. It is highly reactive and can achieve high etch rates, but it can also be corrosive to certain materials and chamber components.

02/

Fluorine (F2): Fluorine is often used for etching oxides like silicon dioxide (Sio 2), silicon nitride, and other dielectric materials. It is highly selective to enable precise control over the etching process. However, Flourine gas molecules can be highly reactive with certain materials that may require additional precautions during RIE.

03/

Sulfur Hexafluoride (SF6): SF6 is commonly employed for etching silicon, glass, and other insulating materials. It has a lower etch rate compared to chlorine and fluorine but offers good selectivity and anisotropy.

04/

Boron Trichloride (BCl3): BCl3 is often used in conjunction with chlorine to etch compound semiconductors, such as gallium arsenide (GaAs), gallium nitride (GaN) and indium phosphide (InP). The combination of BCl3 and Cl2 allows for precise control over the etching process and improved selectivity.

FAQ

Q: What materials can be etched using RIE?

A: RIE can etch a wide range of materials, including silicon, silicon dioxide, silicon nitride, metals, polymers, and ceramics. The choice of gas chemistry determines the material selectivity and etching characteristics.

Q: How does RIE differ from wet etching?

A: RIE is a dry etching process that uses plasma to remove material, whereas wet etching uses chemical solutions. RIE provides higher precision, anisotropic etching, and better control, making it superior for microfabrication applications.

Q: Why is RIE preferred for semiconductor manufacturing?

A: RIE enables precise pattern transfer at the micro and nanoscale, allowing the fabrication of transistors, circuits, and MEMS devices. It also minimizes under-etching, which is common in wet etching.

Q: Can RIE be used for 3D microstructures?

A: Yes, especially with Deep RIE (DRIE), which allows the etching of deep, high-aspect-ratio structures, critical for MEMS and microfluidics. The Bosch process is commonly used for achieving high verticality.

Q: What factors influence the etching rate in RIE?

A: The etching rate is affected by gas chemistry, plasma power, pressure, substrate temperature, and RF bias voltage. Optimizing these parameters ensures faster etching with minimal damage.

As one of the most professional etching machine manufacturers and suppliers in China, we're featured by quality products and good price. Please rest assured to buy customized etching machine from our factory. For quotation and pricelist, contact us now.