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![VPD System]()
VPD SystemNice-Tech’s VPD system stands as a core inspection tool for semiconductor trace metal contamination control—built specifically to ramp up detection sensitivity for advanced IC manufacturing.view more
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We provide full-cycle technical assistance, from equipment commissioning to maintenance, including on-site troubleshooting and real-time online consultation, reducing operational hassles.
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The VPD (Vapor Phase Decomposition) system is a core detection tool for controlling trace metal contamination in semiconductor manufacturing. It utilizes a combination of chemical vapor phase decomposition and high-sensitivity mass spectrometry to achieve precise detection and monitoring of ultra-trace metal contamination on wafer surfaces.
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Category |
VPD system |
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Wafer Compatibility |
8-inch, 12-inch (native); 6-inch (optional, via dedicated trays) |
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Detection Limit (with ICP-MS/MS) |
10⁵-10⁸ atoms/cm²; covers elements 7Li to 238U |
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Process Workflow |
Vapor phase decomposition → Precision droplet scanning → Contaminant collection |
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Full-Wafer Processing Time |
≤60 seconds (radial fast-scanning nozzle) |
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Sampling Modes |
Full-wafer, zonal, annular; supports edge/bevel area collection |
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Decomposition Medium |
High-purity HF vapor (controllable concentration and flow rate) |
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Compatible Analysis Tools |
ICP-MS, ICP-MS/MS, TXRF |
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Automation Protocol |
Supports SECS-GEM; integrable into automated semiconductor production lines |
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Industry Compliance |
Compliant with SEMI standards |
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Applicable Wafer Types |
Bare wafers, patterned wafers, thick oxide layer wafers, novel material wafers |
Ultra-low detection limit:
Capable of detecting metal contamination concentrations as low as 1 × 10⁸ atoms/cm² (equivalent to precisely locating a single grain of sand in a standard swimming pool), with sensitivity 1-2 orders of magnitude higher than traditional methods (such as TXRF).
Comprehensive elemental coverage:
Supports simultaneous analysis of over 70 elements from lithium (Li) to uranium (U), covering key contaminants of concern in the semiconductor industry.
Non-destructive testing:
Avoids contamination introduced by mechanical grinding through chemical vapor etching, ensuring the accuracy of test results.
Flexible sampling:
Supports patterned sampling methods such as full scanning, regional scanning, and annular scanning, adapting to different process requirements.
Strong anti-interference capability:
ICP-MS/MS's collision reaction cell (CRC) technology eliminates mass spectrometry interference, accurately distinguishing between isotopes with the same mass number (e.g., ⁵²Cr and ⁴⁰Ar¹²C).
Applications of VPD System
Raw Material Inspection:
Testing the metal impurity content of silicon wafers upon arrival to ensure the purity of the basic materials.
Front-End Process Monitoring:
Monitoring the metal contamination level on the wafer surface after processes such as oxidation, diffusion, and etching to prevent contamination spread.
Ion Implantation Analysis:
Evaluating the metal impurities introduced during the ion implantation process and optimizing doping uniformity.
Finished Product Testing:
Performing metal contamination analysis on the final product to ensure yield and reliability.
Technology of VPD System
Vapor-phase decomposition:
The wafer is placed in an HF vapor environment to decompose the surface oxide layer (such as SiO₂), exposing and depositing metal contaminants (such as Fe, Cu, Na, etc.) on the wafer surface.
Droplet scanning:
A small volume of scanning liquid (such as a dilute acid solution) is rolled across the wafer surface to collect the dissolved metal contaminants, forming an enriched solution.
Mass spectrometry analysis:
The enriched solution is transferred to an ICP-MS (Inductively Coupled Plasma Mass Spectrometer) or ICP-MS/MS (Tandem Mass Spectrometer) for quantitative analysis of ultra-trace metals.
Operating Environment Control of VPD System
Cleanroom Class Requirements: The VPD-ICP-MS system requires an extremely clean environment, typically operating in a Class 100 or localized Class 10 ultra-clean environment. If the environmental cleanliness is insufficient (e.g., Class 1000 or Class 10000 cleanroom), the test results are easily affected by light metal particles such as sodium, magnesium, and calcium in the air, leading to increased background values and degraded detection limits.
Temperature and Humidity Management: The operating environment must maintain a constant temperature (22±2℃) and humidity (45%±5% RH) to prevent moisture or particulate matter from adsorbing onto the wafer surface, affecting the gas-phase decomposition efficiency. For example, high humidity may lead to uneven condensation of HF vapor, resulting in incomplete decomposition of the oxide layer.
Sample Pre-treatment Specifications of VPD System
Wafer Cleaning and Pre-treatment:
Wafers must undergo standard SC1 (ammonia + hydrogen peroxide + ultrapure water) and SC2 (hydrochloric acid + hydrogen peroxide + ultrapure water) cleaning processes to remove surface organic matter and metal particles.
After cleaning, the wafers must be rinsed three times with ultrapure water, immediately dried with a nitrogen gun, and then transferred to the VPD chamber to avoid secondary contamination.
VPD Chamber Operation Key Points:
HF Vapor Exposure Time: This needs to be adjusted according to the wafer oxide layer thickness (e.g., natural oxide layer is approximately 0.25 nm, thermal oxide layer can reach 100 nm), usually 5-15 minutes. Insufficient time will lead to incomplete decomposition, while excessive time may corrode the silicon substrate.
Scanning Solution Selection: A 1% dilute nitric acid solution is recommended due to its high metal dissolution rate and low background value. Reagents containing sodium and potassium should be avoided to prevent interference.
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