Product overview

Our RIE Etcher 12-inch (Reactive Ion Etcher) is precision dry etching equipment we developed independently-tailored specifically for advanced micro-nano processing. At its core, it blends physical ion bombardment with chemical reaction mechanisms, finally breaking through that tricky "precision-control balance" bottleneck that's long plagued traditional etching tech. It boasts excellent anisotropic etching capability and ultra-high material selectivity, making it a go-to core process tool for semiconductor manufacturing, MEMS development, and optoelectronic device production. Whether you're doing high-end lab research or ramping up industrial mass production, this series delivers stable, reliable process solutions you can count on.

Applications

Semiconductor Manufacturing: We use it for front-end transistor patterning, back-end TSV etching, and SOI substrate processing-total must-have for shrinking chip processes.
MEMS Device Development: It nails precise processing of micro-sensors, actuators, and fluidic chips, reliably etching 3D structures (up to 20:1 aspect ratio) on silicon and polymers.
Optoelectronic Industry: Works for optical waveguides, LED epitaxial wafers, photodetectors-tight structure control cranks up light efficiency.
Nanotechnology Research: Pair with ALE tech, it does atomic-level material removal-super reliable for 2D materials (graphene, MoS₂) and nano-patterns.

Advantages

Uni-body design concept:

Foot-print outstanding (ref 1.0m* 1.0m)

Uniform chamber center pump-down:

Better process performance

Showerhead gas feed-in, also can be configured:

Tuned as a preset parameter dependently

Plasma discharge Gap can be configured:

Tuned as a preset parameter dependently

Cost or performance orientation optional:

RF, Pump, Values etc. depending on requirements

Sample handling optional:

Open-Load or Load-Lock

Parameters

Specification	Parameters
Wafer Size Range	4,6,8,12 inch or multi-wafers optional
Etching Materials	Si-Based(Si/ SiO2/ SiNx/ SiC/ Quartz etc.), Compounds (InP/ GaN/ GaAs/ Ga2O3/ ZnS, etc.),1D&2D Materials (MoS2/ BN/ Graphene, etc.), Metals(Au/Pt/W/Ta/Mo, etc.), Failure Analysis, etc.
Vacuum	TMP& Mechanical Pump
RF Power	Full Range 300-1000W, optional
Gas System	4 lines(Standard) or customized
Wafer Cooling	Water Cooling or He Backside Cooling optional
Wafer Stage Temperature Range	From-70℃ to 200℃, optional
Non-Uniformity	Less than±5%(Edge Exclusion)

FAQ

What types of materials can the RIE Etcher 12-inch process?

It covers Si-based materials, compound semiconductors, 1D&2D materials, metals, etc., and also supports failure analysis of related materials.

What wafer sizes are supported?

Compatible with 4/6/8/12-inch wafers and multi-wafer processing, with customized solutions available for special sizes.

What is the etching uniformity?

The non-uniformity is <±5% after edge exclusion, ensuring full-wafer processing consistency.

What is the temperature range of the wafer stage?

Optional -70°C to 200°C, meeting the requirements of low-temperature to high-temperature etching processes.

How many gas lines are in the standard configuration, and can it be customized?

The standard configuration includes 4 gas lines, which can be customized and expanded according to complex process needs.

What is the RF power range?

Covers a full range of 300-1000W, selectable on demand.

What are the sample handling methods?

Provides two options: Open-Load and Load-Lock, adapting to different production efficiency and environmental control needs.

What vacuum system is equipped?

Adopts a combination of TMP turbomolecular pump and mechanical pump to ensure a stable vacuum environment required for etching.

Is equipment maintenance convenient?

The integrated design simplifies the internal structure, key components are easy to maintain, reducing downtime and maintenance difficulty.

Can the plasma discharge gap be adjusted?

It can be configured and adjusted as a preset parameter according to process requirements to achieve precise etching control.

Does it support cost-oriented or performance-oriented configuration options?

Supports both configurations; key components such as RF power supply, pump, and valves can be selected on demand to balance cost or improve performance.

Can the wafer cooling method be customized?

Supports two options: water cooling and He backside cooling, with customized solutions available for special needs.

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