This Ion Beam Deposition Equipment is a high-precision thin film deposition system designed for the preparation of metal wire and ohmic contact thin films in infrared device manufacturing. It is engineered to deposit high-quality thin films of Cr, Pt, Au, Cu, Ti, Ag and other metals on wafer surfaces, providing a reliable and efficient solution for the fabrication of critical contact layers in optoelectronic devices.

High Adhesion Film Deposition: Adopts a dual-ion source architecture with auxiliary deposition technology, which significantly enhances the adhesion of the deposited thin films, ensuring long-term stability and reliability of the device contact layers.

Precise Temperature Control: Features a wide-range wafer stage temperature control system (10℃ ~ 80℃), enabling precise regulation of the deposition temperature to optimize film quality and uniformity.

Flexible Deposition Angles: Equipped with a multi-angle workpiece stage design, which can meet the thin film deposition requirements at different angles, adapting to diverse device structure and process needs.

Excellent Process Uniformity: Delivers superior film thickness uniformity (better than ±5% within wafer and between wafers), ensuring consistent performance across the entire wafer and batch-to-batch reproducibility.

Large Processing Compatibility: Supports wafer sizes up to 8 inches, compatible with mainstream wafer specifications in the industry, meeting the production needs of medium and large-scale devices.

The equipment is primarily used in the infrared device industry, specifically for the preparation of metal wire and ohmic contact thin films. It fulfills the thin film deposition requirements for various metal materials (Cr, Pt, Au, Cu, Ti, Ag) on wafer surfaces, supporting the production of high-performance infrared optoelectronic components.