Product overview
Our carbon film sputtering equipment is a dedicated system built for depositing high-temperature carbon film protective layers on SiC devices. It uses a cluster architecture that can be configured with multiple process chambers, and comes with automatic wafer loading and unloading. By applying DLC (diamond-like carbon) film technology, it effectively prevents surface chalking on SiC wafers during high-temperature annealing, delivering stable and reliable surface protection.
Advantages
The cluster design supports multiple process chambers, allowing flexible scaling to match different batch sizes and boosting overall production efficiency.
Automatic loading and unloading reduces manual intervention, improves process repeatability, and supports continuous batch processing.
The DLC film process effectively suppresses SiC wafer surface chalking, preserving surface quality and enhancing device performance and reliability.
The sputtering chamber reaches an ultimate vacuum of ≤6E-5Pa, and film thickness uniformity is controlled within ±5%, ensuring consistent, high-quality coatings.
Compatibility with 6-inch and 8-inch wafers makes the system adaptable to various production lines and process requirements.
Applications
This equipment is mainly used in the preparation of carbon film protective layers for SiC devices, especially during high-temperature annealing processes. It supports both 6-inch and 8-inch SiC wafers, making it suitable for R&D and mass production of third-generation semiconductor devices such as SiC power devices, RF devices, and other SiC-based electronic components.
FAQ
Q: 1. What is carbon film sputtering equipment used for?
A: It is used to deposit high-temperature carbon film protective layers on SiC devices, especially during high-temperature annealing to prevent surface chalking.
Q: 2. What are the main advantages of this equipment?
A: It features a cluster design, automatic loading/unloading, DLC film technology, high vacuum performance, and good thickness uniformity.
Q: 3. What wafer sizes does it support?
A: This equipment supports 6-inch and 8-inch SiC wafers for semiconductor manufacturing and R&D.
Q: 4. Can it prevent SiC wafer surface chalking?
A: Yes, its DLC film process effectively suppresses chalking during high-temperature annealing and protects wafer quality.
Q: 5. How precise is the coating process?
A: The sputtering chamber reaches ≤6E-5Pa vacuum, and film thickness uniformity is controlled within ±5%.
Q: 6. Is it suitable for mass production?
A: Yes, the cluster structure and automatic handling make it ideal for both R&D and large-scale SiC device production.
Q: 7. Where is this equipment commonly applied?
A: It is widely used in third-generation semiconductors for SiC power devices, RF devices, and related electronic components.
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