Product overview
Photoresist Stripping Equipment is a fully-automatic wet-processing equipment dedicated to photoresist stripping and metal lift-off applications for semiconductor industry.
Equipped with soak, stripper and clean-dry chambers, the machine completes the full workflow including photoresist dissolution by chemical soaking, metal and photoresist removal, wafer rinsing and drying, which realizes dry-in dry-out operation. It is compatible with multiple substrate materials such as Si, Glass, Sapphire, GaAs, InP, GaN, SiC, LT and LN. The stripper liquid can be recycled via multi-stage filtration system. Optional chamber configurations (1-2 Soak, 1-2 Stripper, 1-2 Clean) satisfy both laboratory R&D pilot and high-volume mass-production requirements.
Advantages
Fully-automatic Dry-in Dry-out Operation
Automatic wafer transfer and full-process execution without manual intervention. All stripping, lift-off, cleaning and drying steps are finished inside the tool to avoid secondary wafer contamination.
Reliable Process Performance
Metal removal rate＞99% and photoresist stripping rate＞99%. Particle performance reaches ≤20ea@0.2μm to ensure high production yield.
Flexible Chamber Customization
Soak, stripper and clean chambers are optional from 1 to 2 sets. Configurations can be tailored for small-batch research and high-throughput production lines.
Chemical Recycling System
Multi-stage filtration enables stripper liquid recovery and reuse. It cuts chemical consumption and operational cost while achieving environmental-friendly production.
Applications
- Advanced Packaging
- MEMS Devices
- Power Semiconductor Devices
- RF Integrated Circuits
- Semiconductor Optics
- Optical Communication Components
- University and Research Institute Laboratories
Parameters
|
Item |
Specification |
|
Model |
AST Series |
|
Process Function |
Photoresist Strip, Metal Lift-Off |
|
Supported Substrates |
Si, Glass, Sapphire, GaAs, InP, GaN, SiC, LT, LN |
|
Chamber Configuration |
1-2 Soak, 1-2 Stripper, 1-2 Clean (Optional) |
|
Particle Control |
≤20ea@0.2 μm |
|
Metal Removal Rate |
＞99% |
|
PR Stripping Rate |
＞99% |
|
Dimension (3-chamber) |
2230 × 1980 × 2450 mm (W×D×H) |
|
Dimension (6-chamber) |
3040 × 1980 × 2760 mm (W×D×H) |
|
Processing Mode |
Automatic, Dry-in Dry-out |
|
Chemical System |
Stripper liquid filtration & recycling |
FAQ
FAQ
Q: What kinds of substrates can the Photoresist Stripping Equipment handle?
A: It supports Si, Glass, Sapphire, SiC, GaN, GaAs, InP, LN and LT. Please provide your substrate material and wafer size for recipe evaluation.
Q: What does dry in dry out mean?
A: Wafers are loaded into the machine in dry condition. Soaking, stripping, cleaning and nitrogen drying are all completed inside the equipment. Wafers are unloaded fully dry. No manual handling of wet wafers, which greatly reduces contamination risks.
Q: Can the stripper liquid be reused?
A: Yes. Photoresist Stripping Equipment is integrated with multi stage filtration circulation loop. The service life of chemical depends on production throughput and metal residue concentration. The system monitors chemical status and reminds operators for replacement.
Q: What is the difference between this wet lift off tool and plasma asher?
A: This equipment performs wet chemical lift off process. It is designed for metal lift off and removes redundant metal together with photoresist. Plasma asher is a dry process mainly for photoresist ashing, and is not suitable for thick metal lift off.
Q: Is lab oriented small batch version available?
A: Yes. Flexible chamber selection is supported. Compact configuration with 1 soak +1 stripper +1 clean chamber is available for R&D purposes, while multi chamber version serves mass production.
Q: What yield performance can we achieve?
A: Under optimized recipes, particle count ≤20ea@0.2μm, metal removal rate and PR stripping rate are both over 99%. Actual yield is also affected by upstream lithography and metal deposition processes. We provide technical support for process tuning.
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