Product overview
Our ICP Etcher Series (Inductively Coupled Plasma Etcher) is a cutting-edge dry etching solution built for high-precision microfabrication-perfect for advanced semiconductor and microelectronic work. It relies on inductively coupled plasma technology to deliver solid plasma density, dependable process control, and wide material adaptability. These features handle the tough demands of next-gen device manufacturing, material research, and industrial production all the same. We've paired innovative plasma generation with precise parameter tuning and flexible configuration options, letting users pull off high-aspect-ratio etching that's low on damage and consistent across the board. It's really become a go-to tool for pushing micro-nano processing forward.
Applications
1.Semiconductor & IC Manufacturing: Front-end transistor patterning, TSV (Through-Silicon Via) etching, and advanced packaging work – the kind of core processes that keep IC production on track.
2. Compound Semiconductor Devices: Building GaN-based power electronics, GaAs/InP optoelectronics (think LEDs, lasers, photodetectors), and SiC power devices for high-performance applications.
3. MEMS & Microfluidics: High-aspect-ratio structure etching, tailored for micro-sensors, actuators, and diagnostic microfluidic chips.
4. 2D Material & Nanotechnology: Precision etching and patterning of 2D materials (graphene, MoS₂) – super useful for next-gen electronic devices and nano-scale research projects.
Advantages
- Uni-body design concept: Foot-print outstanding (ref 1.0m* 1.5m)
- Process design kits depending on requirements: Better process performance
- Chamber liner, electrode temperature control:Suitable for different process application
- Plasma discharge gap tunable: Tuned as a parameter dependently
- Cost or performance orientation optional: RF, Pump, Values etc. depending on requirements
- Plasma Specialization: Low power plasma technology, ion damage-freetional
- Sample handling optional: Open-Load or Load-Lock
Parameters
|
Specification |
Parameters |
|
Wafer Size Range |
4,6,8,12 inch or multi-wafers optional |
|
Etching Materials |
Si-Based(Si/SiO2/ SiNx/ SiC/Quartz etc.), |
|
Vacuum |
TMP& Mechanical Pump |
|
RF Power |
Source 1000-3000W,Bias 300-1000W,optional |
|
Gas System |
5 lines(Standard) and He backside cooling, or |
|
Wafer Stage |
From-70℃ to 200℃, optional |
|
Non-Uniformity |
Less than±5%(Edge Exclusion) |
FAQ
What core advantages does the ICP Etcher offer compared to traditional etching equipment?
It features high plasma density (10¹¹–10¹² cm⁻³) for faster etching rates (up to 10,000 Å/min) and dual independent RF control (source + bias), enabling precise tuning of plasma density and ion energy. This achieves superior anisotropy, ultra-low ion damage, and etching non-uniformity <±3%, outperforming traditional etchers in high-precision and complex process scenarios.
What wafer sizes and materials is the ICP Etcher compatible with?
It supports 4/6/8/12-inch single-wafer or multi-wafer processing, with customizable sample stages for special substrates. Materials covered include Si-based (Si/SiO₂/SiNₓ/SiC), compound semiconductors (GaN/GaAs/InP/Ga₂O₃), 2D materials (graphene/MoS₂/BN), metals (W/Ta/Mo), diamond, and polymers.
Can the equipment be customized for specific process needs?
Yes, it offers flexible configurations: optional Open-Load/Load-Lock sample handling, 4–8 expandable gas lines, customizable RF power ranges, -70°C to 200°C wafer stage temperature control, and add-ons like in-situ OES for endpoint monitoring. Cost or performance-oriented builds are available to match research or mass production requirements.
What is the typical etching performance (aspect ratio, selectivity, sidewall quality)?
It achieves aspect ratios up to 30:1, selectivity (e.g., SiO₂/Si) up to 150:1, and sidewall steepness ≥89°, making it ideal for high-aspect-ratio structure etching in MEMS, TSV, and advanced semiconductor devices.
What vacuum system does the equipment use, and how stable is it?
It is equipped with a TMP turbomolecular pump + mechanical pump combination, reaching a base pressure ≤5×10⁻⁷ Torr and precise process pressure control (1–1000 mTorr via MFC), ensuring consistent plasma stability and etching quality.
Is the ICP Etcher suitable for low-damage processing of sensitive materials?
Yes, it offers an optional low-bias plasma mode that minimizes ion bombardment damage, making it compatible with 2D materials, fragile optoelectronic devices, and high-performance semiconductors requiring surface integrity preservation.
What application scenarios is the equipment designed for?
It is widely used in semiconductor/IC manufacturing (transistor patterning, TSV etching), compound semiconductor devices (GaN power electronics, LED lasers), MEMS/microfluidics, 2D material research, and biomedical device processing (implant surface modification).
What are the space and utility requirements for installation?
The compact integrated design has a footprint of ~1.0m×1.5m. Utility requirements include standard power supply, cooling water, clean dry air, and exhaust system-detailed specifications are provided in the pre-installation guide for site preparation.
What after-sales support and training are provided?
We offer on-site installation, commissioning, and customized process training. A global technical support team provides 24/7 remote assistance, with spare parts supply and regular maintenance services to minimize downtime.
How does the ICP Etcher balance cost and performance for different users?
It provides two configuration orientations: cost-oriented builds with essential core components for laboratory research, and performance-oriented options (high-power RF, advanced monitoring modules) for industrial mass production-ensuring optimal cost-effectiveness for diverse user needs.
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