Product overview

Reactive Ion Etching (RIE) machines are high-performance dry etching tools built around radio frequency discharge technology. Their core trick? Pairing physical bombardment with chemical reactions to precisely strip away target materials-no fuss, just accuracy.

They're a perfect fit for the semiconductor industry's entire workflow, from R&D to full-scale production. Silicon, compound semiconductors, all kinds of dielectric materials-you name the substrate, they can etch it with precision. And they're right at home in key processes for cutting-edge tech: integrated circuits, optoelectronic devices, 5G communication gear, even quantum chips.

Add in digital smart control and automatic constant pressure adjustment, and you get rock-solid process repeatability and etching consistency every time. Whether you're running small-batch lab tests or churning out products in a factory, these machines adapt seamlessly. Need extra performance? Opt for the LOAD LOCK loading chamber. It cuts down on atmospheric contamination, speeds up loading, and keeps the chamber's vacuum tight-all to create a clean, stable environment for high-precision etching. Bottom line: it helps customers smooth out the technical kinks from device R&D all the way to mass production.

Applications

RIE machines shine with precise etching and multi-material adaptability-they're a go-to for semiconductor R&D and production. Here's where they really deliver:

1.Integrated Circuit (IC) Manufacturing: Great for logic chips and memory (DRAM, NAND Flash included). It nailing micro-to-nanoscale etching on silicon substrates and polysilicon gates, keeping circuit structures and electrical performance steady.
2. Optoelectronic Device Production: Fits right into LED and VCSEL manufacturing. It etches sapphire, GaN-based materials, and SiO₂ dielectric layers to build light-emitting regions and waveguide structures, cranking up photoelectric conversion efficiency.
3. 5G Communication Device Processing: Perfect for 5G RF gear (filters, power amplifiers). It etches GaAs, GaN, and SiC substrates to craft high-frequency micro-nano structures, making sure signals stay stable even under high-frequency, high-power conditions.
4. Advanced Semiconductor Research: Supports low-damage etching for quantum chips (superconducting, quantum dot types) and micro-nano processing of cutting-edge materials like silicon carbide and 2D materials-perfect for research institutions' process exploration.
5. MEMS and Sensor Field: Handles MEMS devices (accelerometers, micromirrors) and semiconductor sensors. It etches silicon and silicon-based dielectrics to form 3D microstructures, ensuring solid mechanical performance and detection sensitivity.

Advantages

1.Top-tier precision:

Physical and chemical etching team up to nail micro-to-nanoscale accuracy-right on par with what micro-nano manufacturing calls for.

2. Broad material compatibility:

Plays nice with silicon, compound semiconductors, dielectrics, and more, covering processing needs across all sorts of fields.

3. High stability:

Boasts digital temperature control and constant pressure regulation, keeping processes consistent and cutting down on messy fluctuations.

4. Low material damage:

Keeps substrate harm and contamination to a minimum, so your materials' original properties stay intact.

5. Great flexibility:

You can opt for a LOAD LOCK chamber, and we also support customized setups to fit whatever use case you've got.

Parameters

Item	Specific Indicators
Applicable Wafer Size	8 inch and below
Etching Rate	0.1-4μm/min(specific value depends on the type of material to be etched and actual process parameters)
Etching Uniformity	±5%(based on 6-inch wafer, calculation method: (Maximum Value- Minimum Value)/(2xAverage Value))
Substrate Stage Cooling Method	Water Cooling
Control Method	Full digital automatic control
Pressure Control	Automatic constant pressure adjustment(ensures process stability)
Optional Configuration	LOAD LOCK loading chamber(can reduce atmospheric pollution, improve loading efficiency and chamber vacuum retention capacity)