Product overview
UHB 100 is a high-performance high-energy ion implanter. It is designed for deep-junction doping processes for advanced semiconductor manufacturing. Featuring high acceleration energy up to 8 MeV for single-charge ions, the machine adopts single-wafer implantation architecture. It delivers outstanding system stability, precise parameter control, superior implantation uniformity and repeatability, supporting broad process coverage for logic, memory, imaging and power devices.
Advantages
Ultra-high beam energy capability: Single-charge ion energy exceeds 1 MeV, maximum energy reaches 8 MeV, supporting deep-well and retrograde-well implantation processes.
High-performance long-lifetime ion source: Optimized ion-source design ensures stable output under MeV-level acceleration conditions and reduces downtime for source maintenance.
High energy purity & beam transmission efficiency: Advanced beam-line optical design improves beam transmission efficiency and suppresses energy contamination for high-quality implantation profiles.
Excellent process accuracy: Superior dose uniformity and repeatability across full dose ranges, satisfying stringent requirements of advanced-node mass production.
Single-wafer production-oriented architecture: Single-wafer implantation design enables flexible recipe switching, suitable for mixed-product mass-production in fabs.
Applications
UHB 100 supports high-energy deep-junction implantation for mainstream semiconductor chips:
LOGIC, DRAM, 3D NAND, NOR Flash
CMOS, MOSFET, IGBT, BCD power devices
CIS, MEMS and other imaging-related semiconductor device manufacturing
Parameters
|
Item |
Specification |
|
Energy Range |
20 keV-8 MeV |
|
Max Beam Current |
B⁺: ≥1000 μA @1 MeV |
|
Dose Range |
1E11-5E15 ions/cm² |
|
Dose Uniformity (1σ) |
1E11-5E11 ions/cm²: ≤1%;5E11-5E15 ions/cm²: ≤0.5% |
|
Dose Repeatability (1σ) |
1E11-5E11 ions/cm²: ≤1%;5E11-5E15 ions/cm²: ≤0.5% |
FAQ
Q: What is the core application scenario for UHB 100?
A: UHB 100 is mainly used for high energy deep junction doping such as retrograde well and deep well implantation for logic chips, storage chips and power semiconductor devices. It covers key high energy implantation steps for advanced node manufacturing.
Q: What is the maximum acceleration energy of UHB 100?
A: The maximum energy reaches 8 MeV for single charge ions, and stable beam current output can be achieved at energy above 1 MeV.
Q: How about the dose control performance?
A: For dose range 1E11 5E11 ions/cm², 1σ uniformity and repeatability ≤1%; for 5E11 5E15 ions/cm², 1σ uniformity and repeatability ≤0.5%, which meets strict mass production requirements for IC fabs.
Q: Can UHB 100 work with other SEMICORE implanters in one production line?
A: Yes. UHB 100 can be integrated with CIP series medium current implanters, CIC series high current implanters to build a complete domestic ion implant solution covering low energy, medium energy and high energy processes.
Q: What service support can be provided?
A: SEMICORE ZKX provides full set spare parts supply, annual maintenance, fab move in service, equipment refurbishment, on site technical support and process recipe tuning for production line commissioning.
Q: Is UHB 100 qualified for 28 nm mass production?
A: Yes. UHB 100 has been verified for mass production processes down to 28 nm node for domestic large scale integrated circuit production lines.
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