Ion Implantation System

Ion Implantation System

The Ion Implantation System is a key piece of process equipment for semiconductor manufacturing and advanced material development. It is widely used in integrated circuit fabrication, compound semiconductor processing, and functional material modification.
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Description

Product overview

 

The Ion Implantation System is a key piece of process equipment for semiconductor manufacturing and advanced material development. It is widely used in integrated circuit fabrication, compound semiconductor processing, and functional material modification. We have developed a full lineup of Ion Implantation Systems covering medium-current, high-current, high-energy, custom-configured, and compound semiconductor-specific models to meet diverse process requirements across different application scenarios.

 

Advantages

 

High ion beam purity: The system incorporates advanced ion source and beamline purification designs, which effectively suppress unwanted impurity ions. This ensures stable, high-quality implantation and supports consistent device performance in high-volume production.

Long ion source lifetime: Optimized ion source structure and material selection extend service intervals, reduce maintenance frequency, and lower overall operating costs for users.

Wide process window: The implanter supports a broad range of implantation energy and dose settings, making it suitable for shallow junction formation, deep buried layer doping, and other critical steps in advanced device manufacturing.

High production efficiency: Fast automatic beam tuning reduces setup time and improves throughput. The stable, reliable operation helps maintain high utilization in continuous manufacturing environments.

 

Applications

 

Integrated circuits: Used for doping in transistor source/drain formation, threshold voltage adjustment, well and isolation implants, and other core steps in logic, memory, and analog chip manufacturing.

Compound semiconductors: Applied to doping and modification of GaAs, GaN, and other compound materials, supporting the production of RF devices, optoelectronic chips, and power semiconductors.

Advanced materials: Used for surface doping, property modification, and structural adjustment of metals, ceramics, and new functional materials, enabling improved electrical, optical, and mechanical performance in research and industrial applications.

 

Parameters

 

Parameter Item Specification
Energy Range 2 - 900 keV
Wafer Size 12 inch, 8 inch
Energy Accuracy ±1%
Tilt Angle Control Range 0 - 45°
Angle Accuracy ±0.1°
Ion Source Lifetime (Gas Source) ≥700 h
Ion Source Lifetime (Solid Source) ≥50 h
Max Beam Current (12 inch, B+) 2500 μA
Max Beam Current (12 inch, As+) 1300 μA
Max Beam Current (12 inch, P+) 2500 μA
Max Beam Current (8 inch, B+) 2000 μA
Max Beam Current (8 inch, As+) 1300 μA
Max Beam Current (8 inch, P+) 2000 μA
Dose Uniformity (1σ) ≤0.5%
Dose Repeatability (1σ) ≤0.5%
Dose Range 2E11 - 1E16 ions/cm²
Mechanical Transmission Efficiency 380 pieces/h
Fragmentation Rate 1:100000
Applications LOGIC, DRAM, 3D NAND, NOR, CMOS, MOSFET, IGBT, BCD, CIS, DMEMS, etc.

 

FAQ

 

Q: What is an Ion Implantation System?

A: An Ion Implantation System is a key semiconductor equipment used for doping wafers by implanting ion beams, widely used in integrated circuits and compound semiconductor manufacturing.

Q: What are the main advantages of your Ion Implantation System?

A: Our Ion Implantation System features high ion beam purity, long ion source lifetime, wide energy/dose ranges, fast automatic beam tuning, and high production efficiency.

Q: What applications does the Ion Implantation System support?

A: It supports integrated circuit manufacturing, compound semiconductor processing, and advanced material modification for better electrical and optical performance.

Q:Can you provide customized Ion Implantation System solutions?

A: Yes, we offer customized models for medium-current, high-current, high-energy, and compound semiconductor-specific applications.

Q: How does high ion beam purity improve production?

A: High purity reduces impurities, stabilizes the implantation process, and improves device yield and reliability in mass production.

 

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