Product overview
Nice-Tech offers 8-inch and 12-inch RIBS systems, which combine physical sputtering (from traditional IBS) with reactive gases for precise material patterning.
Common Design: Plasma generation is separated from the wafer area to avoid non-volatile byproduct interference; both support stage tilt/rotation and single/cluster chamber setups.
Differences: The 12-inch is tailored for 12-inch wafer mass production with a large-diameter ion source; the 8-inch is compatible with 8/6/4-inch wafers, ideal for medium-small production and R&D.
Advantages
Common Advantages
- Boosted efficiency & precision: Blending physics and chemistry elevates material removal rates and mask selectivity. Independent control over ion beam energy and flux ensures sharp, accurate pattern morphologies.
- Flexible process adaptability: Stage tilt ranges from -90° to +80° for precise sidewall angle tuning. Rotatable stage enhances uniformity, perfectly suited for special-shaped device manufacturing.
- Broad material compatibility: Works seamlessly with metals, alloys, oxides, and compound semiconductors-tackling even the most complex material patterning challenges.
Differentiated Advantages
- 12-inch: Features a large-diameter ion source delivering <1% etch uniformity (1σ). Ideal for high-precision 12-inch advanced processes.
- 8-inch: Offers <3% uniformity in a compact, cost-effective design. Compatible with multi-size wafers, making it perfect for mature nodes and R&D projects.
Applications
Common Applications
1. Special optical structures: Delivers slanted and blazed gratings-our industry-leading capability-for optical communication systems and laser technologies.
2. Complex semiconductor devices: Patterns multi-layer metal stacks and heterojunctions, guaranteeing reliable device performance in high-demand applications.
3. High-precision sensors: Fabricates MEMS and optical sensors with ultra-accurate microstructures, directly boosting sensor sensitivity and operational stability.
Differentiated Applications
1. 12-inch: A cornerstone for 12-inch advanced production lines-think MRAM/PCRAM functional layers and silicon photonics chips. Seamlessly integrates with existing 12-inch manufacturing workflows.
2. 8-inch: Ideal for 8-inch mature nodes (≥0.11μm) and R&D projects, such as miniaturized optical sensors and specialized MEMS. Supports flexible wafer size switching to fit diverse development needs.
Parameters
|
Category |
8-inch RIBS System |
12-inch RIBS System |
|
Wafer Compatibility |
8-inch (primary); 6-inch/4-inch (optional, via compatible electrodes) |
12-inch (exclusive) |
|
Etch Uniformity (1σ) |
<3% (standard ion source configuration) |
<1% (large-diameter ion source as standard, for high-precision 12-inch wafer processing) |
|
Ion Beam Control |
Independent adjustment of ion beam energy and flux (enables precise tuning of pattern bottom angle and flatness) |
Independent adjustment of ion beam energy and flux (ensures accurate control over advanced process morphology) |
|
Stage Tilt Range |
-90° to +80° (realizes tilted ion beam incidence for sidewall angle control) |
-90° to +80° (supports tilted incidence to meet complex pattern sidewall requirements) |
|
Stage Function |
Rotatable during process (enhances process axisymmetry and within-wafer uniformity) |
Rotatable during process (guarantees consistent processing quality across large 12-inch wafers) |
|
Process Environment |
High-vacuum environment (reduces ambient interference, ensures stable chemical reaction and sputtering) |
High-vacuum environment (maintains reliable synergy of physical sputtering and chemical reactions) |
|
Chamber Configuration |
Single-chamber or cluster configurations (optional, suitable for small-medium production and R&D) |
Integratable into various cluster systems (compatible with large-scale 12-inch advanced process lines) |
|
Material Compatibility |
Metals, alloys, oxides, compound semiconductors, insulators (solves complex material patterning challenges) |
Metals, alloys, oxides, compound semiconductors, and multi-layer stacks (fits advanced device manufacturing needs) |
|
Core Application Scenarios |
8-inch mature process nodes (≥0.11μm), mini optical sensors, special MEMS R&D, small-batch complex component production |
12-inch advanced processes (e.g., MRAM/PCRAM functional layers), silicon photonics chips, large-scale high-precision semiconductor manufacturing |
FAQ
Q: What's the key difference between the 8-inch and 12-inch RIBS systems?
A: The 12-inch targets high-precision 12-inch mass production; the 8-inch fits multi-size wafers (8/6/4-inch) for mature nodes and R&D.
Q: What materials can they process?
A: Both handle metals, alloys, oxides, compound semiconductors, and insulators.
Q: Can they produce special optical structures?
A: Yes, both excel at slanted/blazed gratings with industry-leading capability.
Q: Are the systems compatible with existing production lines?
A: Yes, both support cluster configurations and comply with semiconductor industry standards for easy integration.
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