Product overview

VPD system workflow breaks down into three key steps: First, HF vapor breaks down the oxide layer on the wafer surface; next, it releases the metals trapped within; finally, precision droplets gather these contaminants for in-depth analysis.

Compliant with SEMI standards, the system works seamlessly with 8-inch and 12-inch fabs (6-inch wafers are supported via optional trays). When paired with ICP-MS or TXRF, it pushes sensitivity up by a full 100x.

Whether for high-precision production lines or R&D labs, it delivers consistent, stable performance-even in the most complex semiconductor manufacturing environments.

Advantages

1. Ultra-low detection limit: Enriches trace metals to achieve 10⁵-10⁸ atoms/cm² sensitivity with ICP-MS/MS, covering all elements from Li to U.

2. Broad compatibility: Natively supports 8/12-inch wafers; fits patterned wafers, thick oxides, and novel materials for diverse scenarios.

3. High efficiency: Radial scanning completes full-wafer processing in ≤60s; SECS-GEM support enables automated fab integration.

4. Reliable collection: Flexible sampling (full-wafer/zonal/edge) with high metal recovery and minimal background contamination.

Applications

1. Wafer mass production QC: Keeps tabs on 8/12-inch logic, memory, and power wafers-sniffing out impurities that can derail device performance in critical manufacturing steps.

2. Wafer regeneration: Checks contamination levels on recycled wafers to confirm reusability, helping cut down on production costs.

3. Advanced R&D: Quantifies dopants and impurities in 2D materials and novel films, making it easier to fine-tune process parameters for better results.

4. Wafer-level packaging: Inspects packaged wafer surfaces and bonding interfaces to prevent corrosion or electrical malfunctions down the line.

Parameters

Category	VPD system
Wafer Compatibility	8-inch, 12-inch (native); 6-inch (optional, via dedicated trays)
Detection Limit (with ICP-MS/MS)	10⁵-10⁸ atoms/cm²; covers elements 7Li to 238U
Process Workflow	Vapor phase decomposition → Precision droplet scanning → Contaminant collection
Full-Wafer Processing Time	≤60 seconds (radial fast-scanning nozzle)
Sampling Modes	Full-wafer, zonal, annular; supports edge/bevel area collection
Decomposition Medium	High-purity HF vapor (controllable concentration and flow rate)
Compatible Analysis Tools	ICP-MS, ICP-MS/MS, TXRF
Automation Protocol	Supports SECS-GEM; integrable into automated semiconductor production lines
Industry Compliance	Compliant with SEMI standards
Applicable Wafer Types	Bare wafers, patterned wafers, thick oxide layer wafers, novel material wafers