Product overview
Our company's High-Temperature Oxidation RTP Equipment is a core thermal equipment in large-scale semiconductor production. It is specifically designed to create clean, dense SiO₂ films on silicon substrates, suitable for manufacturing CMOS, IGBT, and MEMS devices.
The 12-inch model High-Temperature Oxidation RTP Equipment is generally used for advanced mass production of large-size wafers, but the 8-inch model is compatible with a variety of oxidation methods, fully meeting mainstream mass production needs. This is the fundamental distinction between the two equipments.
To find the right machine for your needs, please contact us.
Application Industries
Semiconductor Manufacturing Industry (Integrated Circuits, Discrete Devices, Optoelectronic Devices, etc.)
New Energy Electronics Industry (Power Semiconductors Related)
High-End Electronic Components Manufacturing Industry
Semiconductor Research and Pilot Production Field (Universities, Research Institutions)
Application Products
- Core Semiconductor Devices: CMOS Chips, IGBT Power Devices, MEMS Microelectromechanical Systems, RF Devices, etc.
- End-User Related Products: Core Components for 5G Communication Equipment, Automotive Electronic Components, Consumer Electronics Chips, Industrial Control Chips, etc.
- Research Devices: Semiconductor New Material Process Verification Samples, Cutting-Edge Device R&D Prototypes, etc.
Advantages
Precise temperature control (±0.5℃), stable process;
01
Clean chamber, reliable membrane quality;
02
High-efficiency batch production, flexible adaptation;
03
Flexible size/process adaptation to cover different mass production needs.
04
Parameters
|
Item |
12-inch model |
8-inch models |
|
wafer size |
12 inches |
8 inches |
|
Tablet load |
≥125 pieces/boat |
Adapted to 8-inch mass production needs |
|
Temperature range |
- |
600-1150℃ |
|
Temperature control accuracy |
±0.5℃ |
≤±0.5℃ |
|
Length of constant temperature zone |
≥850mm |
300-860mm |
|
Film thickness uniformity |
WIW/WTW/RTR ≤ ±2% |
WIW ≤ ±2%; WTW ≤ ±2% |
|
Applicable processes |
Preparation of oxide film on silicon substrate |
Dry oxygen (Si), wet oxygen (rapid evaporation/water bath/HO ignition) |
FAQ
What is the core purpose of this High-Temperature Oxidation RTP Equipment?
To create a clean and dense SiO₂ film on silicon substrates, suitable for processing key structures in semiconductor devices.
What are the key differences between the 12-inch and 8-inch models?
The 12-inch model is primarily for advanced mass production of large-size wafers, while the 8-inch model is compatible with various oxidation processes, covering mainstream mass production needs.
What are the temperature control accuracy and range?
Temperature control is accurate to ±0.5℃; the 8-inch model has a temperature range of 600-1150℃, meeting the needs of mainstream oxidation processes.
What is the single-batch processing capacity?
The 12-inch model can hold more than 125 wafers per batch, while the 8-inch model is suitable for mass production, with efficiency keeping up with large-scale demands.
Which semiconductor devices are suitable?
CMOS, IGBT, MEMS, etc., can all be used, serving as isolation layers, buffer layers, and other key structures.
Is the chamber cleanliness guaranteed?
Professional materials and structural design ensure the purity of the film preparation, free from impurities.
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