Product overview
This SiC high-temperature oxidation furnace is a specialized thermal processing device built for silicon carbide semiconductor manufacturing. It's mainly used to grow high-quality gate oxide layers for SiC MOSFETs, supporting processes that require low interface trap density and high channel mobility. Beyond SiC MOSFET production, it can also handle a variety of other high-temperature oxidation processes in semiconductor fabrication.
Advantages
1. Stable and uniform processing: The double-layer vacuum-sealed structure keeps the process environment consistent, while temperature and gas flow uniformity help ensure oxide quality across wafers.
2. Clean processing environment: High-purity thermal field materials reduce metal and particle contamination at high temperatures, supporting the cleanliness needs of advanced semiconductor processes.
3. Flexible atmosphere options: Supports low-pressure, dry oxygen, NO, and other atmosphere treatments, making it adaptable to different oxidation process requirements.
4. Built-in cleaning capability: Includes an online metal ion cleaning function to help remove impurities from wafers and the chamber, improving overall process cleanliness.
5. Broad process compatibility: Works with 6-inch and 8-inch wafers, with batch sizes of 50 or 75 pieces, and operates at 800℃ to 1500℃, suitable for both R&D and production-scale use.
Applications
1. Primary use: Gate oxide growth in SiC MOSFET production, helping achieve low interface trap density and high channel mobility for better device performance.
2. Extended use: Other high-temperature oxidation and thermal treatment processes in semiconductor manufacturing, such as oxide film preparation for wide-bandgap materials and wafer annealing.
3. R&D use: Process development and optimization in labs and research institutions working on SiC and advanced semiconductor technologies.
FAQ
Q: 1. What is a SiC high-temperature oxidation furnace?
A: It is a professional thermal processing equipment for SiC semiconductor manufacturing, mainly used for growing high-quality gate oxide in SiC MOSFETs and other high-temperature oxidation processes.
Q: 2. What wafer sizes and batch capacities does it support?
A: It supports 6-inch and 8-inch wafers, with batch capacities of 50 pieces/batch or 75 pieces/batch, suitable for R&D and mass production.
Q: 3. What is the process temperature range of the SiC oxidation furnace?
A: The process temperature ranges from 800℃ to 1500℃, meeting the high-temperature oxidation requirements of SiC materials.
Q: 4. What atmospheres and processes can it handle?
A: It supports low-pressure, dry oxygen, NO and other atmosphere treatments, and has an online metal ion cleaning function.
Q: 5. How does it ensure process cleanliness and uniformity?
A: It adopts a double-layer vacuum sealing structure and high-cleanliness thermal field materials, ensuring temperature/gas flow uniformity and reducing metal/particle contamination.
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