Product overview
Nice-Tech has rolled out three PECVD models-Depomerits PE 100, PE 200, and PE 300-and together they form a product matrix that's got every key scenario covered: from lab research to small-batch runs, all the way to large-scale mass production.
The best part about these three? They share the same rock-solid core capabilities, so you won't face compatibility headaches. Whether you're working with 6-inch, 8-inch, or 12-inch substrates, they handle it. And material-wise, they're versatile too-Si, SiC, GaAs, GaN, even glass wafers, they all work seamlessly.
Process temperature is another strong suit: 75 to 420°C, with steady control, which means they tackle both regular PECVD jobs and those tricky low-temperature processes that demand extra precision. No more switching between different systems for special tasks.
But they're not one-size-fits-all. Each model is tweaked to match specific needs-some for low-volume, complex R&D work, others for high-capacity production lines. So whether you're just starting out with early-stage experiments or running a bustling fab, there's an exact fit in the C180 series for you.
Advantages
1. Scenario Adaptability: Full-Link Coverage
PE 100 (Scientific Research)
Compact design, saves floor space, no complex auxiliary chambers. Enables quick lab deployment, fits small-batch, multi-variety R&D needs, and cuts space/cost investments.
PE 200 (Small-Batch Production)
Balances capacity and size for SMEs. Supports basic substrate preprocessing and alignment, meeting "low input, high process stability" demands.
PE 300 (Large-Scale Production)
Full mass-production configuration. Boosts substrate transfer efficiency and cooling performance, maximizes output. Stably supports complex, long-cycle processes for high-capacity, high-stability needs.
2. Core Process Capabilities: Low Temp, Low Damage, High Flexibility
Low-Damage Process
Custom SHD conductive interface + AE 13.56MHz RF power supply (HALO function). Min 15W output, 0.016W/cm² power density-avoids device damage, ideal for sensitive semiconductors.
Stress Tunability
AE dual-frequency RF (13.56MHz + 400KHz). SiH4-based SiN process achieves +500~-1000MPa stress range, meeting device-specific film stress needs.
High Uniformity & Compatibility
Adjustable moving stage ensures film thickness uniformity. IGS gas panel (10x Gaslines + TEOS) supports SiH4-based SiO/SiN and TEOS-based USG in one chamber, reducing switching time.
Applications
- Scientific Research (PE 100-led): This one's for universities, research institutes, and R&D-focused companies. Whether you're doing basic PECVD studies, testing film properties of new materials (like III-V semiconductors), or verifying MEMS device structures-it gives research teams a steady, reliable lab platform.
- Medium & Small-Scale Manufacturing (PE 200-led): Perfect fit for small and medium semiconductor businesses. It handles small-batch runs of power devices and passive photonic devices, plus processes like BPSG and FSG for TC-SAW filters. The sweet spot? Balancing just the right capacity with cost savings.
- Large-Scale Manufacturing (PE 300-led): Built for big players-think major IC, photovoltaic module, and advanced MEMS manufacturers. It powers mass production of key components: TSV Liners, Cu diffusion barriers, and PV α-Si films. And it's up to the high-stability film demands in AP fields too, covering everything from basic devices to cutting-edge manufacturing.
Parameters
|
Category |
Parameter |
Details |
|
Substrate Compatibility |
Wafer Size |
6-inch / 8-inch / 12-inch (compatible with standard thickness and bonding-thickened wafers) |
|
Substrate Material |
Si, SiC, GaAs, GaN, Glass Wafer |
|
|
Temperature Control |
Process Temperature Range |
75℃ ~ 420℃ (covers low-temperature and conventional processes, meets SEMI process compatibility requirements) |
|
In-Wafer Temperature Uniformity |
< 3℃ (for 6-inch/8-inch wafers, based on 1-Piece AlN-coated Platen) |
|
|
Vacuum & Gas System |
Gas Panel Configuration |
IGS gas panel, supports up to 10× Gaslines + TEOS |
|
Process Gas Compatibility |
SiH₄, N₂O, NH₃, N₂, H₂, B₂H₆, PH₃, SiF₄, O₂, He, Ar, NF₃ |
|
|
Vacuum Level |
Base pressure ≤ 5×10⁻⁶ Torr; Process pressure range: 1~10 Torr (referenced to SEMI E113 standard) |
|
|
Radio Frequency (RF) System |
RF Power Supply Type |
AE Dual-Frequency RFG (HF + LF), compliant with SEMI E113 performance criteria |
|
Frequency & Power Range |
HF: 13.56 MHz (5~3000W, supports HALO function); LF: 400 KHz (300~500 KHz adjustable, 15~1250W) |
|
|
Key Components |
Showerhead (SHD) |
350mmØ full coverage; special conductive interface; compatible with multi-process requirements |
|
Platen |
1-Piece AlN-coated; SHD-Platen gap adjustable (6~20mm) for process optimization |
FAQ
Q: What substrate sizes and materials are compatible with the PECVD series?
A: All models (PE 100/PE 200/PE 300) support 6-inch, 8-inch, and 12-inch wafers (including standard thickness and bonding-thickened wafers), compatible with Si, SiC, GaAs, GaN, and Glass Wafer.
Q: What is the process temperature range of these devices?
A: The temperature spans 75℃~420℃, covering both low-temperature and conventional PECVD process requirements.
Q: How do the three models differ in application scenarios?
A: PE 100 (compact design) is for R&D; PE 200 (3 PM chambers) suits small-batch production; PE 300 (4 PM chambers + dual Loadlock) is optimized for large-scale mass production.
Q: What core process advantages do the devices offer?
A: Key strengths include low-damage (min. 15W RF output), stress tunability (+500~-1000 MPa for SiH₄-based SiN), and high film uniformity (<3% 1σ for 8-inch wafers).
Q: What cleaning solutions are available for the chambers?
A: Optional MKS Paragon RPS system with NF₃ gas (dissociation rate >95%), cleaning SiH₄-based SiO at ~4.2 μm/min; traditional CF₄-based in-situ cleaning is also supported.
Q: How many gas lines do the devices support?
A: Equipped with an IGS gas panel, supporting up to 10× Gaslines + TEOS for multi-process compatibility.
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