Product overview
HII 100 is a specialized H/He ion implanter. It is purpose-built for hydrogen and helium ion implantation processes, especially for electrostatic-sensitive insulating material implantation and layer-splitting technology. Adopting batch implantation architecture, the equipment supports high-energy and high-dose implantation. It is equipped with double-sided plasma shower function to effectively mitigate charge accumulation and electrostatic damage on wafers. This tool serves compound-semiconductor manufacturing, SOI material lift-off, material modification and related R&D and pilot-production requirements for 4-inch and 6-inch wafers.
Advantages
1. Double-sided plasma shower system: Effectively suppresses electrostatic charging damage, highly suitable for implantation of electrostatic-sensitive insulating substrates.
2. High-energy & high-dose batch implantation: Supports batch wafer processing with high maximum energy and large dose capability, improving throughput for layer-transfer and splitting processes.
3. Optimized for H/He dominant implantation: Beam-line system is tuned for hydrogen and helium ions; also compatible with B, Ar and other auxiliary implant species for diversified process demands.
4. Controllable process temperature: Stable wafer temperature control within RT-200 °C to meet thermal constraints of special materials.
Robust beam stability: Reliable ion source and beam transport design guarantee long-run stability for material research and pilot-volume production.
Applications
Material lift-off / layer splitting for SOI and similar smart-cut technologies
Implantation for insulating and electrostatic-sensitive materials
Compound-semiconductor material modification
Scientific research, new-material development and pilot production
Parameters
|
Item |
Specification |
|
Wafer Size |
6 inch, 4 inch |
|
Energy Range (Single-charge) |
30-400 keV |
|
Implant Species |
H, He, B, Ar |
|
Process Wafer Temperature |
RT-200 °C |
FAQ
Q: What is the key feature of HII 100 compared with general purpose implanters?
A: Its core highlight is the double sided plasma shower function, which solves electrostatic damage risks for insulating and charge sensitive wafers. It is optimized for high dose H/He batch implantation for material splitting processes.
Q: What typical processes is HII 100 mainly used for?
A: It is widely applied for H/He induced layer splitting (Smart Cut), insulating material ion implantation, and material modification of compound semiconductors. It fits both lab scale research and small batch pilot production.
Q: Which wafer sizes can HII 100 handle?
A: Standard support for 4 inch and 6 inch wafers. Custom sample holders can be considered for special small pieces upon request.
Q: Can HII 100 implant ions other than H and He?
A: Yes. Besides H and He, it supports B and Ar for auxiliary implantation processes.
Q: What is the working temperature range during implantation?
A: Process wafer temperature ranges from room temperature up to 200 °C, matching thermal sensitive substrate requirements.
Q: Can HII 100 work together with other SEMICORE ZKX implanters?
A: Yes. It can cooperate with SiC dedicated implanters, multi functional customized implanters and production grade CIP/CIC/CIE series platforms. It can complete pre research of special material recipes before mass production trials.
Q: What after sales services are available?
A: We provides spare parts supply, on site installation & commissioning, routine maintenance, and technical support for special process recipe debugging.
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