Product overview
The SCD 12 is 12-inch automatic spin-coater and developer track equipment for semiconductor lithography process. Designed for 300 mm wafer manufacturing, it adopts modular-architecture design, supporting flexible chamber configuration. It can realize inline connection with lithography exposure tools, covering mass-production and R&D scenarios for integrated circuits, advanced packaging, power devices and other fields.
It is capable of processing ultra-thin and warped wafers, supports dual-wafer-size switching without part replacement, and is fully compatible with mainstream semiconductor lithography processes.
Advantages
High-capacity & compact footprint Modular process-unit design, high throughput, saves valuable clean-room space. Process chambers can be configured flexibly according to customer requirements.
Strong warped-wafer processing capability Supports stable transfer & processing for ultra-thin and warped wafers with warpage below 5 mm, solving difficulties for special-substrate manufacturing.
Dual-size compatibility without hardware replacement Switch between different wafer sizes without mechanical-part replacement, shorten changeover time and reduce operation cost.
Inline-ready for lithography tools Optional Interface module supports In-line docking with mainstream lithography exposure machines, realizing fully automatic track-litho workflow.
Rich functional-module options Supports high-precision hot plate, optical alignment, WEE wafer edge exposure and other optional components to match diversified-process requirements.
Parameters
|
Item |
Specification |
|
Model |
SCD 12 12-inch Spin Coater & Developer |
|
Wafer Size |
12-inch (300 mm), dual-size compatible without part replacement |
|
Substrate Material |
Si, Glass |
|
Chamber Configurations |
2C2D / 4C / 4D / 4C4D (customizable) |
|
Supported Lithography Process |
i-line, KrF, ArF, PI, SOG, SOC |
|
Applicable Lithography Linewidth |
≥90 nm |
|
Max Throughput |
110 WPH (depends on recipe & configuration) |
|
Warped Wafer Compatibility |
Support warpage ≤5 mm ultra-thin / warped wafer transmission & processing |
|
Dimension (W × D × H) |
4970 × 1973 × 2460 mm |
|
Inline Function |
Optional Interface module to connect with lithography machine |
|
Optional Units |
High-precision hot plate, optical alignment, WEE wafer edge exposure module |
|
Control Mode |
Local control / remote factory automation control |
|
Certification |
Compliant with SEMI S2 |
Faqs
FAQ
Q: What substrates and wafer sizes does SCD 12 support?
A: Mainly for 12 inch(300 mm) wafers, supporting Si and Glass substrates. It supports dual size switching without replacing spare parts, and can process warped/ultra thin wafers with warpage ≤5 mm.
Q: What lithography processes can this machine run?
A: It supports i line, KrF, ArF, PI, SOG, SOC processes, suitable for lithography line width ≥90 nm.
Q: Can SCD 12 connect to lithography scanner / stepper?
A: Yes. Select the optional Interface module to achieve In line inline docking with mainstream lithography exposure machines.
Q: What chamber configurations are available for selection?
A: Available configurations: 2C2D / 4C / 4D / 4C4D. Customers can add optional units including high precision hot plate, optical alignment, WEE, Interface inline module based on process requirements.
Q: What is the actual throughput?
A: Maximum throughput is 110 WPH. Real world throughput varies with actual chamber configuration and production recipe.
Q: Is SCD 12 suitable for both mass production and laboratory R&D?
A: Yes. Flexible modular configuration can meet high volume mass production fab demands, and also adapt to small batch R&D work in research institutes.
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