Industrial MOCVD System

Industrial MOCVD System

Nice-Tech CV600/CV700 series are high-end mass-production MOCVD devices for compound semiconductor epitaxial growth, adopting proprietary planetary-satellite dual rotation technology to realize multi-wafer growth with single-wafer-level uniformity.
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Description

Product overview

Nice-Tech CV600/CV700 series are high-end mass-production MOCVD devices for compound semiconductor epitaxial growth, adopting proprietary planetary-satellite dual rotation technology to realize multi-wafer growth with single-wafer-level uniformity. Boasting leading source gas utilization efficiency via optimized gas injection and transport design, the equipment is SEMI-S2/SEMI-S6 certified, easy to operate and maintain, and supports flexible customization. CV700 is the high-capacity upgraded model, forming a gradient product line to meet diverse mass production demands of global industrial users and research institutions.

 

Advantages

 

1. Superior growth uniformity: Planetary-satellite dual rotation ensures flat material surface, sharp diffraction peaks and steep growth interfaces with excellent uniformity.

2. High source gas utilization efficiency: Optimized gas design boosts source gas utilization, ideal for cost-sensitive epitaxial mass production.

3. High safety and reliability: SEMI-S2/SEMI-S6 certified, with optimized structure for easy operation, simple maintenance and long service life.

4. Wide material growth range: Covers epitaxial growth of mainstream 2nd and 3rd-generation semiconductor materials for multi-scenario compound semiconductor manufacturing.

5. Flexible configuration & customization: Rich substrate size options, support for customized upgrade of gas circuits, thermostatic baths and other core components.

6. Precise process control: Standard with independent satellite plate temperature control, in-situ R/T monitoring and multi-layer gas injection for high-precision, stable growth.

 

Applications

 

This series enables epitaxial growth of mainstream 2nd/3rd-generation semiconductor materials (arsenides, phosphides, nitrides, SiC, etc.), and the prepared thin film materials are applied to manufacturing semiconductor, optical and power devices. It serves core terminal fields including new energy, power transmission, 5G/aerospace communication, high-speed transportation and intelligent manufacturing, and is the key equipment for mass production of third-generation semiconductor power devices, VCSEL and solar cells.

 

Parameters

 

Category

Key Specifications

CV600

CV700

Substrate Configuration

Available wafer combinations (core specs)

12x4", 6x6", 8x6", 5x8"

15x4", 8x6", 9x6", 6x8"

Standard Gas Circuit (As/P-based materials)

MO source gas lines

8 lines (6 standard + 2 double dilution)

 

Hyd gas lines (doping included)

4 lines (2 standard + 2 double dilution)

Standard Gas Circuit (Nitride materials)

MO source gas lines

6 lines (5 standard + 1 double dilution)

 

Hyd gas lines (doping included)

3 lines (2 standard + 1 double dilution)

Core Standard Hardware

Core functional components

Clean dry oxygen-free glove box, Ceiling temperature control, RF heating kit, independent satellite plate temperature control, in-situ R/T monitoring, multi-layer gas injection mechanism

Key Optional Configuration

Core upgrade items

1. Robotic arm for satellite plate transfer, in-situ warpage monitoring
2. MO gas lines expandable to 14 paths, Hyd gas lines expandable to 6 paths
3. MO source concentration online monitoring components
4. Additional thermostatic baths (max 8 large/12 small)

Typical Process Performance

Doping uniformity

GaAs:Si ≤0.87%; GaAs:C ≤4.53%

 

Component uniformity

GaInP/AlGaInP MQW std ≤0.02%; InGaAs/AlGaAs MQW std ≤0.022%

 

Thickness uniformity

GaInP bulk std ≤0.6%

 

Bulk material performance

GaAs bulk: BG concentration <1×10¹⁵cm⁻³, mobility 7210 cm²/V-s

InP bulk: BG concentration as low as 1.45×10¹³cm⁻³

 

 

 

FAQ

 

FAQ

Q: What core technology does the series adopt?

A: Planetary-satellite dual rotation, with single-wafer-level uniformity for multi-wafer growth.

Q: What materials can it grow?

A: 2nd-gen (arsenides/phosphides) and 3rd-gen (nitrides/SiC) semiconductors.

Q: What's the difference between CV600 and CV700?

A: CV700 is a high-capacity model with higher substrate carrying capacity; core specs are consistent.

Q: Is the equipment safety certified?

A: Yes, it has SEMI-S2/SEMI-S6 international certifications.

Q: Does it support customization?

A: Yes, gas lines, monitoring components, thermostatic baths can be customized/upgraded.

Q: What are its mass production advantages?

A: Leading source gas utilization, excellent uniformity, easy operation/maintenance.

Q: What core hardware is standard equipped?

A: Oxygen-free glove box, in-situ R/T monitoring, independent satellite plate temperature control, RF heating kit, etc.

Q: What are its main application fields?

A: New energy, 5G/aerospace, high-speed transportation, smart manufacturing; core for 3rd-gen semiconductor power devices/VCSEL/solar cells.

 

 

 

 

 

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