Product overview
Our Ion Beam Etching (IBE) System is a high-precision material processing equipment designed for the micro-nano fabrication industry. It utilizes a focused and controllable ion beam to perform physical etching on the surface of thin-film materials, enabling selective etching or lift-off processes with high precision.
This system is professionally engineered to process a wide range of thin-film materials, including but not limited to Cu, Cr, Pt, Au, Ti, Ag, and Al₂O₃. It supports standard wafer sizes of 6 inches and 8 inches, making it highly compatible with mainstream semiconductor and micro-electro-mechanical systems (MEMS) manufacturing processes. By leveraging low-temperature and low-damage etching technology, it provides an ideal solution for the preparation of high-performance micro-nano devices.
Advantages
High Precision & Process Control
The system is integrated with an advanced etching endpoint detection system, which enables real-time monitoring and precise control of the entire etching process. This ensures excellent repeatability and accuracy, with an etching uniformity of ≤±5% (both within wafer and wafer-to-wafer), guaranteeing consistent high-quality results across production batches.
Superior Process Compatibility
It satisfies multi-angle, low-temperature (0°C – 30°C), and low-damage etching requirements. This capability is crucial for protecting temperature-sensitive and fragile materials, minimizing substrate damage, and preserving the intrinsic properties of the thin films, thus significantly improving device yield and performance.
Flexible & Scalable Configuration
To meet diverse production and R&D needs, the system offers an optional cluster tool architecture. This modular design allows for the integration of multiple process chambers, facilitating seamless process integration, high-volume manufacturing, and efficient workflow automation, making it suitable for both laboratory research and industrial mass production.
Applications
The Ion Beam Etching System is a critical piece of equipment in the field of advanced micro-nano manufacturing, with a wide range of applications:
1. Semiconductor Device Fabrication
It is used for the precise patterning of metal electrodes, interconnections, and gate structures in integrated circuits (ICs), as well as for the trimming and adjustment of thin-film resistors and capacitors.
2. MEMS & NEMS Manufacturing
It plays a vital role in the fabrication of micro-sensors, micro-actuators, and other MEMS/NEMS devices, enabling the creation of high-aspect-ratio microstructures and suspended structures with high precision.
3. Optoelectronic Device Production
It is applied to the processing of thin-film materials in lasers, photodetectors, and optical waveguides, facilitating the production of high-performance optoelectronic components.
4. Advanced Packaging & Interconnection
It is used in advanced packaging technologies for the selective etching of redistribution layers (RDLs) and the preparation of high-precision bump structures.
FAQ
Q: 1. What is an Ion Beam Etching (IBE) System?
A: An Ion Beam Etching (IBE) System is a high-precision micro-nano processing equipment that uses a focused ion beam to perform physical etching on thin-film materials. It is mainly used for selective etching and stripping of various thin films, and is widely used in semiconductor, MEMS, optoelectronics and other fields.
Q: 2. What materials is the IBE System suitable for?
A: This IBE System is suitable for selective etching or stripping of thin-film materials such as Cu, Cr, Pt, Au, Ti, Ag, and Al₂O₃, and can meet the processing needs of various common metal and dielectric thin films.
Q: 3. What wafer sizes does the ion beam etching machine support?
A: The ion beam etching machine supports two standard wafer sizes: 6 inches and 8 inches, which is compatible with mainstream wafer processing specifications in the industry and meets the needs of R&D and small-batch production.
Q: 4. What are the advantages of ion beam etching technology?
A: Ion beam etching has the advantages of low temperature (0℃~30℃), low damage, multi-angle processing, and high uniformity. It can reduce thermal stress and material damage, and ensure the stability and consistency of the etching process.
Q: 5. What is the etching uniformity of the IBE System?
Yes, the ion beam etching machine is integrated with an advanced etching endpoint detection system, which can monitor the etching process in real time, realize precise control of the etching process, and avoid over-etching or under-etching.
Q: 6. Does the ion beam etching machine have an endpoint detection function?
A: Yes, the ion beam etching machine is integrated with an advanced etching endpoint detection system, which can monitor the etching process in real time, realize precise control of the etching process, and avoid over-etching or under-etching.
Q: 7. Can the IBE System be configured with multiple process chambers?
A: Yes, the IBE System supports an optional cluster architecture, which can be equipped with multiple etching process chambers to meet the needs of flexible process switching and improved production efficiency.
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