Product overview

SCD6 and SCD6S are compact 6-inch automatic spin coater & developer systems for compound semiconductor, power device, MEMS and optoelectronic manufacturing.

SCD6: Targeted for power device and LED production. It adopts compact structure, supports substrates like Si, Sapphire, GaAs, GaN, SiC, InP, LT, LN, and fits G-line / i-line processes.

SCD6S: Oriented to MEMS, RF integrated circuit, optical communication and laboratory research. It expands material compatibility to Glass, and adds PI process capability, delivering higher flexibility for diverse R&D and pilot-production tasks.

Both models feature small footprint, dual-size compatibility without part replacement, precise photoresist metering pump feeding, and comprehensive built-in functions such as EBR, BSR and nozzle auto-cleaning.

Advantages

Model differentiation for different scenarios SCD6 optimizes for power / LED mass-production; SCD6S adds PI process and glass-substrate support for MEMS, RF and research-oriented users.

Flexible optional modules Support photoresist / developer temperature control, HMDS vapor priming module to match diverse process requirements.

Complete traceability capability Long-term storage for equipment failure logs and process parameter records, convenient for quality tracing and process analysis.

Comprehensive standard process functions Built-in EBR, BSR, RRC, glue nozzle automatic moisturizing and cleaning functions to ensure stable lithography quality.

High-precision photoresist delivery Precision metering pump for photoresist supply, high dosing accuracy and stable liquid feeding; easy recipe setup for dispense volume.

Parameters

Item	SCD6	SCD6S
Model	SCD6 6-inch Spin Coater & Developer	SCD6S 6-inch Spin Coater & Developer
Wafer Size	6-inch (150 mm), dual-size compatible without part replacement	6-inch (150 mm), dual-size compatible without part replacement
Substrate Material	Si, Sapphire, GaAs, InP, GaN, SiC, LT, LN	Si, Glass, Sapphire
Chamber Configurations	2C2D / 4C / 4D	3C / 4C / 6D
Supported Lithography Process	G-line, i-line	G-line, i-line, PI
Equipment Dimension (W × D × H)	1050 × 1900 × 2200 mm	1500 × 1450 × 2200 mm
Optional Units	Photoresist / developer temperature control, HMDS module	Photoresist / developer temperature control, HMDS module
Core built-in functions	EBR, BSR, RRC, nozzle auto-humidify & cleaning	EBR, BSR, RRC, nozzle auto-humidify & cleaning
Control Mode	Local control, long-term recipe & fault log storage	Local control, long-term recipe & fault log storage
Certification	Compliant with SEMI S2	Compliant with SEMI S2

Faqs

Q: What is the difference between SCD6 and SCD6S?

A: SCD6 is optimized for power device and LED massproduction, supporting diverse compound semiconductor substrates (Sapphire, GaN, SiC etc.) with Gline / iline processes. SCD6S adds PI process capability and glasssubstrate compatibility, more suitable for MEMS, RF IC, opticalcommunication and laboratory R&D scenarios. Chamber configurations and physical dimensions are also different.

Q: Do SCD6 / SCD6S support wafer size switching?

A: Yes. Both models support dualsize compatibility without replacing spareparts, shortening product switch time.

Q: What optional modules can be selected?

A: Photoresist & developer temperaturecontrol module, HMDS priming module are available for both SCD6 and SCD6S.

Q: Can the machine store process and fault history?

A: Yes. Process parameters and equipment fault records can be saved longterm for quality traceback and process debugging.

Q: Are they suitable for massproduction or only lab use?

A: Both support smallbatch massproduction as well as laboratory R&D. SCD6 is more oriented toward power / LED volume manufacturing; SCD6S fits pilotproduction and research projects.

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